AON7408 30v n-channel mosfet features v ds (v) = 30v i d = 23a (v gs = 10v) r ds(on) < 20m w (v gs = 10v) r ds(on) < 32m w (v gs = 4.5v) 100% uis tested! general description the AON7408 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in general purpose applications. g d s dfn 3x3 ep top view bottom view pin 1 top view 12 3 4 87 6 5 symbol v ds v gs i dm t j , t stg symbol typ max 25 40 62 75 r q jc 6.2 7.5 c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w c/w maximum junction-to-case b steady-state maximum junction-to-ambient a steady-state t a =70c 3.1 v 20 gate-source voltage i d pulsed drain current c power dissipation b w 10 continuous drain current a t a =25c i dsm t a =25c p dsm t c =25c continuous drain current b maximum units parameter t c =25c t c =100c 23 15 drain-source voltage 30 absolute maximum ratings t a =25c unless otherwise noted va 8 64 junction and storage temperature range p d c 16.7 7 -55 to 150 t c =100c t a =70c 2 power dissipation a alpha & omega semiconductor, ltd. www.aosmd.com
AON7408 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1.5 2.1 2.6 v i d(on) 64 a 15.3 20 t j =125c 23.3 30 22.7 32 g fs 17 s v sd 0.75 1 v i s 3.8 a c iss 373 448 pf c oss 67 pf c rss 41 pf r g 1.8 2.8 w q g 7.1 8.6 nc q gs 1.2 nc q gd 1.6 nc t d(on) 4.3 ns t r 2.8 ns v gs =10v, v ds =5v v ds =30v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current v gs =10v, i d =10a reverse transfer capacitance forward transconductance diode forward voltage maximum body-diode continuous current input capacitance output capacitance dynamic parameters i s =1a,v gs =0v v ds =5v, i d =10a v gs =0v, v ds =15v, f=1mhz turn-on rise time electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions r ds(on) static drain-source on-resistance v gs =4.5v, i d =5a m w i dss m a gate threshold voltage v ds =v gs , i d =250 m a drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v gate resistance v gs =0v, v ds =0v, f=1mhz v gs =4.5v, v ds =15v, i d =10a gate drain charge v gs =10v, v ds =15v, r l =1.5 w , turn-on delaytime switching parameters total gate charge gate source charge alpha & omega semiconductor, ltd. www.aosmd.com t r 2.8 ns t d(off) 15.8 ns t f 3 ns t rr 10.5 12.6 ns q rr 4.5 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =10a, di/dt=100a/ m s body diode reverse recovery time i f =10a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.5 w , r gen =3 w turn-off fall time a: the value of r ja is measured with the device in a still air environm ent with t a =25 c. the power dissipation p dsm and current rating i dsm are based on t j(max) =150 c, using t 10s junction-to-ambient thermal resistance. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c: repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. d. the r ja is the sum of the thermal impedence from junction t o case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. h. the maximum current rating is limited by bond-w ires. rev5: may-2012 alpha & omega semiconductor, ltd. www.aosmd.com
AON7408 typical electrical and thermal characteristics 373 448 67 41 1.2 1.8 7.1 8.6 3.5 1.2 1.6 0 3 6 9 12 15 1.5 2 2.5 3 3.5 4 4.5 i d (a) v gs (volts) figure 2: transfer characteristics 10 15 20 25 30 35 40 0 5 10 15 20 r ds(on) (m w ww w ) 0.6 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance v gs =10v v gs =4.5v 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5v 4.5v 6v 10v alpha & omega semiconductor, ltd. www.aosmd.com this product has been designed and qualified for th e consumer market. applications or uses as critical 0 3 6 9 12 15 1.5 2 2.5 3 3.5 4 4.5 i d (a) v gs (volts) figure 2: transfer characteristics 10 15 20 25 30 35 40 0 5 10 15 20 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage 0.6 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v v gs =4.5v 10 20 30 40 50 60 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =10a 25 c 125 c 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5v 4.5v 6v 10v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c alpha & omega semiconductor, ltd. www.aosmd.com
AON7408 typical electrical and thermal characteristics 373 448 67 41 1.2 1.8 7.1 8.6 3.5 1.2 1.6 0 2 4 6 8 10 0 2 4 6 8 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =10a 1 10 100 1000 0.0001 0.01 1 100 power (w) t j(max) =150 c t a =25 c 0.01 0.1 1 10 100 0.1 1 10 100 i d (amps) r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 1ms 10 m s dc alpha & omega semiconductor, ltd. www.aosmd.com this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 2 4 6 8 10 0 2 4 6 8 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note h) c oss c rss v ds =15v i d =10a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 10 100 1000 0.0001 0.01 1 100 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note h) t j(max) =150 c t a =25 c 0.01 0.1 1 10 100 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note h) r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 1ms 10 m s dc alpha & omega semiconductor, ltd. www.aosmd.com
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